s m d s c h o t t k y b a r r i e r r e c t i f i e r s reverse v oltage: 20 to 100 v olts forward current: 1.0 amp rohs device page 1 rev :a features -ideal for surface mount applications. -easy pick and place. -plastic package has underwriters lab. flammability classification 94v -0. -built-in strain relief. -low forward voltage drop. mechanical data -case: jedec do-214aa, molded plastic. -t erminals: solderable per mil-std-750, method 2026. -polarity: color band denotes cathode end. -approx. weight: 0.093 grams cdbb120-g thru. cdbb1 100-g maximum ratings and electrical characteristics d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r ) qw -bb004 cdbb 120-g 2 no tes : 1. th erm al r esi sta nce fro m jun ctio n t o a mb ien t a nd jun ctio n t o le ad mo unt ed on p .c. b. wit h 0 .2 0.2 inc h c opp er pad ar ea. comchip t echnology co., l td. max. repetitive peak reverse voltage max. dc blocking voltage max. rms voltage peak surge forward current, 8.3ms single half sine-wave superimposed on rate load (jedec method) max. average forward current max. instantaneous forward voltage at 1.0a o max. dc reverse current at t a =25 c o rated dc blocking voltage t a =100 c max. thermal resistance (note 1) max. operating junction temperature storage temperature cdbb 140-g cdbb 160-g cdbb 180-g cdbb 1 100-g units symbol parameter v rrm v dc v rms i fsm i o v f i r r ja r jl t j t stg 20 20 14 40 40 28 60 60 42 30 1.0 0.70 0.5 10 75 17 125 -65 to +150 80 80 56 100 100 70 v v v a a v ma o c/w o c o c 0.50 0.85 d o - 2 1 4 a a ( s m b ) 0.155(3.94) 0.130(3.30) 0.083(2.1 1) 0.075(1.91) 0.220(5.59) 0.200(5.08) 0.012(0.31) 0.006(0.15) 0.008(0.20) 0.004(0.10) 0.050(1.27) 0.030(0.76) 0.096(2.44) 0.083(2.13) 0.185(4.70) 0.160(4.06)
qw -bb004 ra ting and characteristic cur ves (cdbb120-g thru cdbb1 100-g) percent of rated peak reverse v oltage (%) 200 120 80 160 0 fig.1 reverse characteristics 0.01 0.1 1 10 100 r v r e u r e n t ( m a ) e e s c r forward v oltage (v) 0 fig.2 forward characteristics 0.01 o w r d c r r e n ( a ) f r a u t 0.1 1 10 100 0.8 reverse v oltage (v) 0.1 fig.3 junction capacitance 10 j n t i n a p a c i a n c e ( p ) u c o c t f 100 1000 1 10 100 o ambient t emperature ( c) fig.4 current derating curve 0 a v e r a g e f o r w a r d c u r r e n t ( a ) 0.6 0.8 1.4 comchip t echnology co., l td. page 2 rev :a 1.2 2.0 0 100 175 0.2 1.2 40 0.4 1.6 0.4 s m d s c h o t t k y b a r r i e r r e c t i f i e r s o t j =75 c o t j =25 c cdbb120-g~140-g cdbb160-g cdbb180-g~1 100-g o t j =25 c pulse width 300 s 4% duty cycle number of cycles at 60hz fig.5 non-repetitive forward surge current 0 p a f r a d u g c u r e t ) e k o w r s r e r n ( a 30 40 60 1 10 100 10 50 20 o t j =25 c 8.3ms single half sine wave, jedec method 25 50 75 150 125 1.0 c d b b 1 2 0 - g 1 0 - g ~ 4 c d b b 1 6 0 - g ~ 1 1 0 - g 0 o t j =25 c f=1mhz and applied 4vdc reverse voltage
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